Low-voltage organic transistor with subfemtoliter inkjet source-drain contacts

作者：Yokota Tomoyuki; Sekitani Tsuyoshi; Kato Yu; Kuribara Kazunori; Zschieschang Ute; Klauk Hagen; Yamamoto Tatsuya; Takimiya Kazuo; Kuwabara Hirokazu; Ikeda Masaaki; Someya Takao^*

来源：MRS Communications, 2011, 1(1): 3-6.

DOI：10.1557/mrc.2011.4

We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 mu m and a channel length of 1 mu m were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90 degrees C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.

• 出版日期2011-11