Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature

作者：Letha A J^*; Chan F M; Hwang H L

来源：Journal of Electronic Materials, 2010, 39(1): 39-42.

DOI：10.1007/s11664-009-0963-4

• Thin film
• chemical vapor deposition
• crystallinity

The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150A degrees C and at different dilution ratios of H(2) to SiH(4) + H(2) were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (a-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.

• 出版日期2010-1
• 单位清华大学