Diffusion barrier properties of AlMoNbSiTaTiVZr high-entropy alloy layer between copper and silicon

作者：Tsai Ming Hung^*; Yeh Jien Wei; Gan Jon Yiew

来源：Thin Solid Films, 2008, 516(16): 5527-5530.

DOI：10.1016/j.tsf.2007.07.109

• high-entropy alloy
• diffusion barriers
• amorphous structure
• thermal stability

The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper metallization has been investigated. The AlMoNbSiTaTiVZr and copper layers are deposited sequentially, without breaking vacuum, onto silicon substrates by DC magnetron sputtering. The AlMoNbSiTaTiVZr films are found to possess a stable amorphous structure due to their high-entropy and limited diffusion kinetics. The AlMoNbSiTaTiVZr high entropy alloy film is determined to prevent copper-silicide formation up to 700 degrees C for 30 min. Thus, HEAs appear to have potential use as effective diffusion barriers for copper metallization.

• 出版日期2008-6-30
• 单位清华大学