Ambient field effects on the current-voltage characteristics of nanowire field effect transistors

作者：Karmalkar Shreepad^*; Maheswaran K R K; Gurugubelli Vijayakumar

来源：Applied Physics Letters, 2011, 98(6): 063508.

DOI：10.1063/1.3555426

We investigate the effects of ambient field from the gate and drain contacts on the current-voltage characteristics of a vertical nanowire field effect transistor having a lightly doped ungated length near the drain. Such a device is suitable for high voltage (tens of volts) applications. It is shown that the ambient field enhances the carrier concentration and divides the ungated region into gate-controlled and drain-controlled sections, controllable by the drain contact size and bias-voltages. These phenomena have a significant impact on the drain breakdown voltage, saturation voltage, saturation current and output resistance. The effects are established with the help of measured data and numerically calculated current-voltage curves and field lines.

• 出版日期2011-2-7