Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD

作者：Wang XQ^*; Li JS; Chen Q; Qi J; Yin M; He DY

来源：Acta Physica Sinica, 2005, 54(1): 269-273.

• ICP-CVD
• Al-induced crystallization
• Si thin films
• low-temperature growth

Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition (ICP-CVD) in SiH4/H-2 mixtures at a low temperature of 350degreesC. The structure of the films was characterized by x-ray diffraction, x-ray photoelectron spectrum, atomic force microscopy and spectroscopic ellipsometry. It has been shown that the films are of a highly ordered structure with a strong (111) orientation. Grain size is larger than 300 nm. There is no residual Al in the films. Considering the high electron density in inductively coupled plasma, a preliminary interpretation is given for the mechanism of Al-induced crystallization during low-temperature deposition of Si films.

• 出版日期2005-1
• 单位兰州大学