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摘要
The luminescence properties of Nd-doped SiOx layers containing silicon nanocrystals (Si-ncs) were investigated by steady state, time-dependent and power-dependent photoluminescence spectrometry and photoluminescence excitation experiments. Both direct and indirect excitation processes of Nd3+ ions have been evidenced. The energy transfer mechanism between Si-ncs and Nd3+ ions is favored by the overlap between the emission spectrum of confined excitons in Si-ncs and the Nd3+ absorption from the ground state to F-4(5/2) electronic level. The more intense Nd-related emission was obtained in samples containing 0.5 at. % of Nd and characterized by an indirect excitation cross section equal to 8 x 10(-15) cm(2).
- 出版日期2011-12-1
