As-rich (2x2) surface reconstruction on GaAs(111)A

作者：Ohtake Akihiro^*; Ito Toru Akiyama Tomonori

来源：Surface Science, 2012, 606(23-24): 1864-1870.

DOI：10.1016/j.susc.2012.07.029

• Reflection high-energy electron diffraction (RHEED)
• Scanning tunneling microscopy
• Gallium Arsenide
• Surface Structure

The atomic structures and the formation processes of the Ga- and As-rich (2x2) reconstructions on GaAs(111)A have been studied. The Ga-rich (2x2) structure is formed by heating the As-rich (2x2) phase, but the reverse change hardly occurs by cooling the Ga-rich surface under the As-2 flux. Only when the Ga-rich (2x2) surface covered with amorphous As layers was thermally annealed, the As-rich (2x2) surface is formed. The As-rich (2x2) surface consists of As trimers located at a fourfold atop site of the outermost Ga layer, in which the rest-site Ga atom is replaced by the As atom.

• 出版日期2012-12