Low-Temperature Processable Organic-Inorganic Hybrid Gate Dielectrics for Solution-Based Organic Field-Effect Transistors

作者：Nagase Takashi; Hamada Takashi; Tomatsu Kenji; Yamazaki Saori; Kobayashi Takashi; Murakami Shuichi; Matsukawa Kimihiro; Naito Hiroyoshi^*

来源：Advanced Materials, 2010, 22(42): 4706-+.

DOI：10.1002/adma.201001871

Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 degrees C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO(2) dielectrics, and hysteresis-free, highly stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

• 出版日期2010-11-9