摘要
Ultrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Delta t shows strong photocurrent suppression when two pulses overlap (Delta t = 0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias V-SD, and is twice as long for photon energy above the second subband E-22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.
- 出版日期2012-2-24