A 0.18-mu m CMOS balanced amplifier for 24-GHz applications

作者：Jin Jun De^*; Hsu Shawn S H

来源：IEEE Journal of Solid-State Circuits, 2008, 43(2): 440-445.

DOI：10.1109/JSSC.2007.914292

• balanced amplifier
• CMOS
• lumped-element coupler
• narrowband amplifier
• parallel resonance

A 24-GHz balanced amplifier (BA) with a 45-dB gain is realized in 0.18-mu m CMOS technology. An effective technique, pi-type parallel resonance, is proposed to boost the high-frequency gain of a MOSFET by resonating out the inherent capacitances. The miniaturized lumped-element coupler in the circuit occupies a chip area of only similar to 2% compared to that of the conventional transmission-line coupler. The BA consumes 123 mW from a supply voltage of 1V. To the best of the authors' knowledge, the proposed CMOS BA presents the highest gain of 45.0 dB with a chip area of 0.97 x 0.63 mm(2) (core area: 0.78 x 0.43 mm(2)) among the published narrowband amplifiers with similar technologies and operation frequencies.

• 出版日期2008-2
• 单位清华大学; 中国科学院电工研究所