A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair

作者：Gong Yunyi^*; Cho Moon Kyu; Song Ickhyun; Cressler John D

来源：IEEE Microwave and Wireless Components Letters, 2018, 28(8): 717-719.

DOI：10.1109/LMWC.2018.2844166

• Bidirectional
• differential
• neutralization
• phased array
• SiGe BiCMOS

This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip transformer-based input-output baluns are included in the design for single-ended measurement and characterization. The BDA was implemented using GlobalFoundries 8HP 0.13-mu m SiGe BiCMOS technology. The forward and backward gains are 10 and 8.6 dB, with noise figure of 3.9 and 4.2 dB, respectively, at 28 GHz. The input-referred 1-dB compression point at 28 GHz for forward and backward operations is -2.4 and -0.4 dBm, respectively. The BDA consumes 26.9 (mW) of power with a 1.6-V V-CC at a V-BE bias of 0.86 V. The circuit has dimensions of 0.71 x 0.90 mm(2) including bondpads.

• 出版日期2018-8