A general two-step chemical vapor deposition procedure to synthesize highly crystalline transition metal dichalcogenides: A case study of MoS2

作者：Shidpour Reza^*; Vosoughi Manouchehr; Maghsoudi Hadi; Simchi Abdolreza^*

来源：Materials Research Bulletin, 2016, 76: 473-478.

DOI：10.1016/j.materresbull.2015.12.039

• Electronic materials
• Vapor deposition
• Raman spectroscopy
• Chalcogenides
• Electron microscopy

A green and simple synthesis method based on a two-step chemical vapor deposition approach has been developed to synthesize transition metal dichalcogenides flakes. With non-toxic precursor such as transition metal oxides and elemental sulfur, large-area, strong photoluminescent and uniform MoS2 nanoflakes were produced at a relatively low growth temperature (650 degrees C). Controlling the layer number and morphology was achieved only by precursor concentration without any oxide impurity revealed by SEM, PL and Raman spectroscopy. This method can be used to make wide range of metal chalcogenides such as ZnS, SnS2, PtS2 and PdS2.

• 出版日期2016-4