Meandering of overgrown v-shaped defects in epitaxial GaN layers

作者：Weidlich P H; Schnedler M; Portz V; Eisele H; Dunin Borkowski R E; Ebert Ph^*

来源：Applied Physics Letters, 2014, 105(1): 012105.

DOI：10.1063/1.4887372

The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (10 (1) over bar0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.

• 出版日期2014-7-7