Dual-Mode AlN-on-Silicon Micromechanical Resonators for Temperature Sensing

作者：Fu Jenna L^*; Tabrizian Roozbeh; Ayazi Farrokh

来源：IEEE Transactions on Electron Devices, 2014, 61(2): 591-597.

DOI：10.1109/TED.2013.2295613

• Beat frequency
• dual-mode (DM) resonator
• piezoelectric-on-silicon
• self-temperature sensing

In this paper, we present dual-mode (DM) AlN-on-silicon micromechanical resonators for self-temperature sensing. In-plane width-shear (WS) and width-extensional (WE) modes of [110]-oriented silicon resonators have been used as alternatives to first- and third-order modes to enhance DM temperature sensitivity by engineering device geometry, which reduces inherent beat frequency f(b) between the two modes. This configuration provides a 50x improvement in temperature coefficient of beat frequency (TC f(b)) compared with single-mode temperature measurement and eliminates the need for additional frequency multipliers to generate f(b) from its constituents. [100]-oriented WS/WE resonators provide 4x larger TCF difference between modes (Delta TCF) than first and third width-extensional resonators, which further contributes to TC f(b) enhancement. WS/WE mode resonators also demonstrate the capability of operating as a temperature-stable reference f(b). The proposed modes for DM operation have high Q and low motional resistance, and are 180 degrees out-of-phase when operated in two-port configuration, thus enabling mode-selective low-power oscillator interfacing for resonant temperature sensing.

• 出版日期2014-2