An approach to decrease dimensions of field-effect transistors without p-n-junctions

作者：Pankratov E L^*; Bulaeva E A

来源：International Journal of Modern Physics B, 2014, 28(27): 1450190.

DOI：10.1142/S0217979214501902

• Field-effect transistors
• decreasing of dimensions of transistors
• analytical approach to model transistors
• optimization of technological process

It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing sharpness of p-n-junctions (both single p-n- junctions and p-n-junctions, which include into their system). In this situation, one can also obtain increase of homogeneity of dopant in doped area. In this paper, we consider manufacturing a field-effect heterotransistor without p-n-junction. Optimization of technological process with using inhomogeneity of heterostructure gives us possibility to manufacture transistors to be more compact.

• 出版日期2014-10-30