Neutralization of an epitaxial graphene grown on a SiC(0001) by means of palladium intercalation

作者：Yagyu Kazuma^*; Takahashi Kazutoshi; Tochihara Hiroshi; Tomokage Hajime; Suzuki Takayuki

来源：Applied Physics Letters, 2017, 110(13): 131602.

DOI：10.1063/1.4979083

Pd-intercalated graphene grown on a SiC(0001) substrate was investigated using STM, angleresolved photoemission spectroscopy, and XPS. Pd atoms deposited at room temperature on a zero layer graphene grown on a SiC(0001) substrate were intercalated between the zero layer graphene and the SiC substrate after the thermal annealing above 700 degrees C, forming a Pd-intercalated single layer graphene. No charge transfer occurred between the intercalated Pd layer and the graphene, which resulted in the formation of the electrically neutral graphene. The Pd-intercalated graphene remained electrically neutral throughout the annealing temperature range between 700 and 1100 degrees C. The charge transfer, however, occurred between the intercalated Pd layer and the SiC substrate, which caused a band bending confirmed in the core level spectra measured by XPS. Published by AIP Publishing.

• 出版日期2017-3-27