A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

作者：Xie, Jia Qiang^*; Ma, Li; Li, Wei; Gao, Yong; Yu, Ning Mei

来源：IEICE Electronics Express, 2017, 14(17): 20170677.

DOI：10.1587/elex.14.20170677

• floating field stop
• IGBT
• reverse-conducting
• recess

We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P+ anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 mu m, the snapback voltage Delta VSB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5V. Furthermore, the recess structure at the backside can separate the N+ short and P+ anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N+ short and P+ anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

• 出版日期2017-9-10
• 单位西安理工大学