Mechanism of V-FB/V-TH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

作者：Lee Tackhwi^*; Choi Kisik; Ando Takashi; Park Dae Gyu; Gribelyuk Michael A; Kwon Unoh; Banerjee Sanjay K

来源：Journal of Vacuum Science and Technology B, 2011, 29(2): 021209.

DOI：10.1116/1.3562974

The authors discuss temperature-dependent dysprosium (Dy) diffusion and the diffusion-driven Dy-silicate formation process in Dy incorporated HfO2. The Dy-induced dipoles are closely related to the Dy-silicate formation at the high-k/SiO2 interfaces since the V-FB shift in Dy2O3 is caused by the dipole and coincides with the Dy-silicate formation. Dipole formation is a thermally activated process, and more dipoles are formed at a higher temperature with a given Dy content. The Dy-silicate related bonding structure at the interface is associated with the strength of the Dy dipole moment and becomes dominant in controlling the V-FB/V-TH shift during the high temperature annealing in the Dy-Hf-O/SiO2 gate oxide system. Dy-induced dipole reduces the degradation of the electron mobility.

• 出版日期2011-3