Analog Negative-Bias-Temperature-Instability Monitoring Circuit

作者:Yelten Mustafa Berke*; Franzon Paul D; Steer Michael B
来源:IEEE Transactions on Device and Materials Reliability, 2012, 12(1): 177-179.
DOI:10.1109/TDMR.2011.2178096

摘要

A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V-1 and is demonstrated through electrothermal stress on the amplifier circuit.

  • 出版日期2012-3