A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits

作者：Habal Husni^*; Graeb Helmut

来源：Microelectronics Reliability, 2016, 61: 17-23.

DOI：10.1016/j.microrel.2016.01.001

• Reliability analysis
• Threshold voltage instabilities
• Device modeling
• Variability-aware simulation

A compact add-on model is proposed to simulate the mechanism of charge trapping and release (detrapping) and its effect on the threshold voltage of MOSFET devices. The model uses implicit algebraic differential equations compatible with transient analysis in SPICE. It also shares the accuracy level of the transient analysis. A micro model approach is used, and each trap is treated by a two-state Markov process. The normalization of trap behavior can be enabled or disabled, so that the designer can compare average trap behavior to the result of repeated Monte-Carlo simulations of a circuit. In this manner, the model can compromise between device-level modeling and circuit-level modeling. Unlike models geared towards digital circuit design, the trapping and release rates need not be constant during electrical stress. The trapping and release rates are a function of time, as they depend on the circuit state-space equations. An operational amplifier is analyzed using the new model, and the proposed approach is compared with the state of the art.

• 出版日期2016-6