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摘要
The circuits of memristor with border constraint, connected with capacitance and inductance in series, and with capacitance and inductance in parallel are studied separately. The properties of the circuits and the influences of frequency and element parameters on circuit are analyzed. Theories are proved by simulation. Potential applications are predicted based on the properties of memristor with border constraint and its related circuits.
- 出版日期2012-6
- 单位北京邮电大学
