A facile method to oxidize p-type Zinc Selenide nanowires into n-type Zinc Oxide nanowires

作者：Zhang, Xiwei^*; Tang, Zhenjie; Hu, Dan; Wang, Zhi; Yu, Fengjun; Cui, Haitao; Xu, Tongshuai; Ju, Lin

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(3): 3021-3025.

DOI：10.1007/s10854-015-4124-7

A facile method was used to oxidize p-type Zinc Selenide (ZnSe) nanowires into n-type Zinc Oxide (ZnO) through a 700 degrees C annealing process in air. Single crystal ZnSe nanowires, with a hole concentration of 0.805 x 10(18) cm(-3) and a negative photoconductivity, were oxidized into polycrystalline ZnO nanowires with an electron concentration of 4.88 x 10(18) cm(-3) and a positive photoconductivity. Additionally, both the as-synthesized ZnSe nanowires and the post-oxidized ZnO nanowires presented excellent optoelectronic properties. This method can be used to construct radial p-n junctions or other nano-devices based on a single NW through a regioselective oxidation process.

• 出版日期2016-3
• 单位安阳师范学院