A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs

作者：Guo Jyh Chyurn^*; Lo Yi Zen

来源：IEEE Transactions on Electron Devices, 2015, 62(9): 3004-3011.

DOI：10.1109/TED.2015.2453998

• Contact etching stop layer (CESL) strain
• effective mobility (mu(eff))
• layout-dependent effects
• multifinger
• source resistance (R-S)
• transmission line (TML)

A new method is is developed for accurate extraction of the effective mobility (mu(eff)) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher mu(eff) in the nMOSFETs. However, the source resistance (RS) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of RS, which may offset mu(eff) improvement and degrade transconductance (gm). A two-end source line is proposed to reduce RS and the impact on gm. The complicated layout-dependent effects containing the CESL strain, RS, and 3-D fringing capacitances bring a crucial challenge to the mu(eff) extraction. In this paper, a distributed transmission line model is derived for a reliable determination of RS, which is a key to the realization of accurate extraction of mu(eff) and layout-dependent effects in multifinger devices.

• 出版日期2015-9
• 单位中国科学院电工研究所