科研之友
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摘要
Charge transport in GaN quantum well devices grown in the nonpolar direction is theoretically investigated. Emergence of a different form of anisotropic line charge scattering mechanism originating from anisotropic rough-surface morphology in conjunction with in-plane built-in polarization is proposed. It is shown that such scattering leads to a large anisotropy in carrier transport properties, which is partially reduced by strong isotropic optical phonon scattering.
- 出版日期2010-11-4
