科研之友
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摘要
Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based on a mobile Sn nanowire inside a beta-Ga2O3 tube. The melting point of Sn inside the Ga2O3 tube is found to be as low as 58 degrees Cfar below the value of bulk Sn (231.89 degrees C)and its crystal phase (beta-Sn) remains unchanged even at temperatures as low as 170 degrees C. Thus a miniaturization of the unique wide-temperature-range thermometer based on the linear thermal expansion of liquid Sn fillings in the Ga2O3 tube is realized. In addition, the electrical properties of the Sn-nanowire-filled beta-Ga2O3 tubes are carefully determined: importantly, the resistance demonstrates a sudden drop (rise) when two Sn nanowires contact (separate), due to the thermally driven motion of the liquid Sn fillings inside the tube. Thus this structure can be switched between its on and off states by controlling the motion, merging or splitting, of the Sn nanowires inside the tube, either electrically, by applying a current, or thermally, at a predetermined temperature.
- 出版日期2011-12-2
- 单位东华大学
