科研之友
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摘要
Ga2O3 nanobelts were synthesized by gas reaction at high temperature in the presence of oxygen in ammonia. X-ray diffraction and chemical microanalysis revealed that the nanostructures were Ga2O3 with the monoclinic structure. Electron microscopy study indicated the nanobelts were single crystalline with broad (0 10) crystallographic planes. The nanostructures grew anisotropically with the growth direction of [60 (4) over bar]. Statistical analysis of the anisotropic morphology of the nanobelts and electron microscopy investigation of the nanobelt tips indicated that both vapor-solid and vapor-liquid-solid mechanisms controlled the growth process. The anisotropic nature of crystallographic morphology is explained in terms of surface energy.
- 出版日期2006-5-1
