Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

作者：Suzuki Hidetoshi^*; Matsushita Takuya; Katayama Masahiro; Maeda Kouji; Ikari Tetsuo

来源：Japanese Journal of Applied Physics, 2014, 53(1): 018001.

DOI：10.7567/JJAP.53.018001

The anisotropies of misfit dislocations (MDs) formed at an InGaAs/GaAs(001) interface grown by molecular beam epitaxy were investigated using X-ray topography and X-ray reciprocal space mapping techniques. The MDs bunched in small regions to form MD bunches. The number of MDs running along the [(1) over bar 10] direction (alpha-MDs) included in one MD bunch was larger than that along the [110] direction (beta-MDs). In addition, the bunched alpha-MDs were aligned more periodically than the other MDs.

• 出版日期2014-1