Diode-pumped passively Q-switched mode-locked Nd : YLF laser with uncoated GaAs saturable absorber

作者：Pan Shudi^*; Xue Lin; Fan Xiouwei; Huang Haitao; He Jingliang

来源：Optics Communications, 2007, 272(1): 178-181.

DOI：10.1016/j.optcom.2006.10.082

• diode-pumped
• Nd : YLF solid-state laser
• mode-locking
• passively Q-switched
• GaAs wafer

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 mu J and 76 kW.

• 出版日期2007-4-1
• 单位山东师范大学; 山东大学