A unified model for unipolar resistive random access memory

作者：Lee Kwangseok; Jang Jung Shik; Kwon Yongwoo; Lee Keun Ho; Park Young Kwan; Choi Woo Young

来源：Applied Physics Letters, 2012, 100(8): 083509.

DOI：10.1063/1.3688944

A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simulate realistic cell structures with higher accuracy.

• 出版日期2012-2-20