Arsenic doping and activations in HgCdTe by MBE

作者：Zhao Zhen-Dian^*; Chen Lu; Fu Xiang-Liang; Wang Wei-Qiang; Shen Chuan; Zhang Bin; Bu Shun-Dong; Wang Gao; Yang Feng; He Li

来源：Journal of Infrared and Millimeter Waves, 2017, 36(5): 575-580.

DOI：10.11972/j.issn.1001-9014.2017.05.011

• IRFPAs
• HgCdTe
• As-doping
• MBE

The arsenic doping and activations on HgCdTe (mercury cadmium telluride) p(+)-on-n hetero-junctions grown by MBE (molecular beam epitaxy) have got a lot of attention in fabricating high performance long-wavelength IRFPAs (infrared focal plane arrays). In this paper, the performances of HgCdTe diodes with different arsenic doping concentrations are presented. According to the I-V results and dark current mechanism, the effect of arsenic concentration on the trap-assisted tunneling current was calculated and analyzed. To achieve reproducible doping and activation process, the dependence between arsenic doping efficiency and Hg/Te condition was reported. As activation ratio could be higher than 60% under activated annealing at 300, 420 and 240 degree Celsius under an Hg saturated vapor pressure, which was demonstrated by means of Hall-effect measurements and SIMS (Secondary Ion Mass Spectrometry).

• 出版日期2017-10
• 单位中国科学院大学; 中国科学院上海技术物理研究所