Annealing and activation of silicon implanted in semi-insulating InP substrates

作者：Dong HW^*; Zhao YW; Li JM

来源：Materials Science in Semiconductor Processing, 2003, 6(4): 215-218.

DOI：10.1016/j.mssp.2003.08.002

• semi-insulating InP
• ion implantation
• silicon
• annealing
• activation

We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate.
These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances.

• 出版日期2003-8
• 单位中国科学院