摘要

Highly crystallized ZnO-Ga2O3 core-shell heterostructure microwire is synthesized by a simple one-step chemical vapor deposition method, and constructed into a self-powered solar-blind (200-280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W-1) at 251 nm with a high UV/visible rejection ratio (R-251 nm/R-400 nm) of 6.9 x 10(2) under zero bias. The self-powered device has a fast response speed with rise time shorter than 100 mu s and decay time of 900 mu s, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self-powered solar-blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the highperformance self-powered photodetectors.