A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

作者：Jin E N^*; Kornblum L; Kumah D P; Zou K; Broadbridge C C; Ngai J H; Ahn C H; Walker F J

来源：APL Materials, 2014, 2(11): 116109.

DOI：10.1063/1.4902433

We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 x 10(14) cm(-2) per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

• 出版日期2014-11