Analytic Compact Model of Ballistic and Quasi-Ballistic Cylindrical Gate-All-Around Metal-Oxide-Semiconductor Field Effect Transistors Including Two Subbands

作者：Cheng He^*; Uno Shigeyasu; Numata Tatsuhiro; Nakazato Kazuo

来源：Japanese Journal of Applied Physics, 2013, 52(4): UNSP 04CN03.

DOI：10.7567/JJAP.52.04CN03

We propose a compact model of drain current in the ballistic and quasi-ballistic modes for cylindrical gate-all-around (GAA)-MOSFETs with two subbands based on the perturbation theory. By setting one unknown parameter, we can use it to express surface potential and electron confinement energy levels to calculate drain current analytically. With our compact model, we obtained a good agreement with the numerical compact model. In addition, we carry out a NMOS inverter circuit simulation using this model.

• 出版日期2013-4