Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

作者：Zhang, Yamin^*; Feng, Shiwei; Zhu, Hui; Zhang, Guangchen; Deng, Bing; Ma, Lin

来源：Journal of Applied Physics, 2013, 114(9): 094516.

DOI：10.1063/1.4820763

• RAMAN-SPECTROSCOPY
• HEMTS

The forward Schottky characteristic method, utilizing the temperature dependence of forward gate-source Schottky junction voltage, has been used to measure the transient temperature rise under DC and cycle pulse for multi-finger AlGaN/GaN high electron mobility transistor. The effect of electrical pulse on channel temperature has been studied. The transient temperature rise of channel under pulses with different duty cycles and frequencies are determined, respectively. The measurement results show that operation under high frequency and/or low duty cycle can improve the lifetime and performance reliability of AlGaN/GaN HEMT devices effectively. Furthermore, the measurement results are found to be consistent with the electro-thermal simulation results performed for the device.

• 出版日期2013-9-7
• 单位北京工业大学