Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

作者：Jhan Yi Ruei^*; Wu Yung Chun; Wang Yu Long; Lee Yao Jen; Hung Min Feng; Lin Hsin Yi; Chen Yu Hsiang; Yeh Mu Shih

来源：IEEE Electron Device Letters, 2015, 36(2): 105-107.

DOI：10.1109/LED.2014.2386213

• Tunnel field-effect transistor (TFET)
• microwave annealing (MWA)
• screening tunneling length (lambda)
• band-to-band tunneling (BTBT)

Unlike the high-temperature activation of dopants, such as rapid thermal annealing (RTA), the activation of dopants by low-temperature microwave annealing (MWA) suppresses their diffusion, reducing screening tunneling length (lambda). This letter compares low-temperature (490 degrees C) MWA with high-temperature (1050 degrees C) RTA of a fin-shaped poly-crystalline silicon (Poly-Si) tunnel field-effect transistor (TFET). The band-to-band tunneling voltage (V-BTBT) indicates clearly that TFET annealed by MWA had a lower lambda than TFET that was annealed by RTA. The TFET that was annealed by MWA had a high ON/OFF current ratio of 10(8), a low subthreshold swing, and an almost negligible drain-induced barrier lowering.

• 出版日期2015-2
• 单位清华大学