Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

作者：Wang Zhiming^*; Lü Xin; Luo Xiaobin; Cui Yuxing; Sun Xiguo; Mo Jianghui; Fu Xingchang; Li Liang; He Dawei

来源：Chinese Journal of Semiconductors, 2015, 36(2): 024005.

DOI：10.1088/1674-4926/36/2/024005

• InAlAs/InGaAs
• InP
• MMICs
• PHEMTs
• small-signal modeling

90-nm T-shaped gate InP-based In0.52Al0.48As/In0.6Ga0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2 × 30 μm, a source - drain space of 2.5 μm, and a source - gate space of 0.75 μm. DC, RF and small-signal model characterizations were demonstrated. The maximum saturation current density was measured to be 755 mA/mm biased at Vgs = 0.6 V and Vds = 1.5 V. The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at Vgs = -0.1 V and Vds = 1.5 V. The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz, respectively. The inflection point (the stability factor k = 1) where the slope from -10 dB/decade (MSG) to -20 dB/decade (MAG) was measured to be 83 GHz. The small-signal model of this device was also established, and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

• 出版日期2015
• 单位北京理工大学