Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix

作者：Zhou, Guangdong^*; Wu, Bo; Liu, Xiaoqin; Li, Ping; Zhang, Shuangju; Sun, Bai; Zhou, Ankun

来源：Physical Chemistry Chemical Physics, 2016, 18(9): 6509-6514.

DOI：10.1039/c5cp07650a

• CHARGE-STORAGE
• FLOATING-GATE
• ZRO2 FILMS
• NANOPARTICLES
• DEVICES
• NANOCRYSTALS
• PERFORMANCE
• GROWTH
• MOVPE
• HFO2

A two-bit memory and quantized storage phenomenon are observed at room temperature for a device based on the traditional MOS structure with double-stacked Pt-nanocrystals (Pt-NCs). A 2.68 and 1.72 V flat band voltage shift (memory window) has been obtained when applying a +/- 7 V programming/erasing voltage to the structures with double-stacked Pt-NCs. The memory windows of 2.40 and 1.44 V can be retained after stress for 10(5) seconds, which correspond to 89.55% and 83.72% stored charges reserved. The quantized charge storage phenomenon characterized by current-voltage (J-V) hysteresis curves was detected at room temperature. The shrinkage of the memory window results from the decreasing tunneling probability, which strongly depends on the number of stacks. The traps, de-traps and quantum confinement effects of Pt-NCs may contribute to the improvement of dielectric characteristics and the two-bit memory behavior. The multi-bit memory and quantized storage behavior observed in the Pt-NCs stacks structure at room temperature might provide a feasible method for realizing the multi-bit storage in non-volatile flash memory devices.

• 出版日期2016-3-7
• 单位西南大学; 中国科学院昆明植物研究所; 遵义师范学院