Modulation of carrier density in graphene on polycrystalline PZT ceramic

作者：Chen, Y. Y.; Wang, D. Z.; Zhu, Y.; Jiang, L. H.; Xiang, Y. H.; Xin, C.; Zhou, W. L.^*

来源：Diamond and Related Materials, 2017, 77: 10-15.

DOI：10.1016/j.diamond.2017.04.016

• Graphene
• Polycrystalline Pb2Zr0.52Ti0.48O3 ceramic
• Carrier density modulation
• Ferroelectric polarization
• Surface morphology
• PN junction

Modulation of carrier density in graphene has been demonstrated on single-crystalline or polymer ferroelectrics as gating dielectric. However, its tuning from p-type to n-type in air at room temperature has not yet been reported. In this paper, such a tuning is realized on polycrystalline PbZr0.52Ti0.48O3 (PZT) ceramic under polarization field in the range of -22.5 kV/cm to 22.5 kV/cm through the construction of a "graphene/PZT + suspended graphene" network film. The maximum hole and electron density of graphene in our fabricated Hall bar device are measured to be 6.3 x 10(13) cm(-2) and 1.7 x 10(13) cm(-2) respectively. There exhibit certain features in graphene's Raman spectrums corresponding to its transition from p-type to n-type with relationship to the PZT surface morphology and the contact status between graphene and PZT surface. At last, an in-plane graphene PN junction is demonstrated on PZT ceramic as well.

• 出版日期2017-8
• 单位华中科技大学