Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

作者：Okazaki Sohei; Hirose Yasushi^*; Nakao Shoichiro; Yang Chang; Harayama Isao; Sekiba Daiichiro; Hasegawa Tetsuya

来源：Thin Solid Films, 2014, 559: 96-99.

DOI：10.1016/j.tsf.2013.11.059

• Oxyfluoride
• In2O3
• Fluorine
• Reactive pulsed laser deposition
• Topotactic reaction
• Epitaxial growth
• Bixbyite
• Fluorite

In OxFy thin films were epitaxially grown on Y-stabilized ZrO2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T-S), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high TS (>= 240 degrees C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) similar to 0.3. By decreasing T-S, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T-S <= 150 degrees C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films.

• 出版日期2014-5-30