Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application

作者：Moon Dyukyoung^*; Lee Hyunseul; Shin Changhwan; Shin Hyungcheol

来源：IEICE Electronics Express, 2014, 11(13): 20140468.

DOI：10.1587/elex.11.20140468

• gate-induced drain leakage (GIDL)
• random telegraph noise (RTN)
• trap-assisted-tunneling (TAT)
• band-to-band tunneling (BBT)

The characteristics of the Random Telegraph Noise (RTN) in Gate-Induced Drain Leakage (GIDL) current are first investigated. Based on the Hurkx model, a new model is developed for the Trap-Assisted-Tunneling (TAT) and Band-to-Band Tunneling (BBT) regimes in Saddle Metal-Oxide-Semiconductor Field-Effect Transistor (Saddle MOSFET) for DRAM applications. The three-dimensional Technology-based Computer Aided Design (TCAD) simulator is used to quantitatively analyze and model the RTN. The RTN amplitude in GIDL current (i.e., Delta I/I) increases with increasing drain-to-gate voltage (V-DG) in the TAT regime, whereas Delta I/I decreases with increasing V-DG in the BBT regime. Simulation results are well matched to the results estimated by the newly-proposed equations derived from the Hurkx model. This model would open a new pathway for the RTN analysis in DRAM devices.

• 出版日期2014