科研之友
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摘要
By using in-situ reflection high energy electron diffraction, the epitaxial growth of Co films on GaAs(001) surface is studied. When the growth temperature was 150°C, the growth process of Co films can be divided into three stages. The crystal structure of the first 3 nm of the Co film is body-center-cubic (bcc) metastable phase. Then the next 4 nm film is a complicated polycrystalline phase. After the thickness exceeds 7 nm, the Co film is a single-crystalline hexagonal-close-packed (hcp) stable phase. This new result clears up the controversy in former experiments about the structure of the Co epilayer, and establishes, for the first time to our knowledge, a clear physical picture of the epitaxial growth of Co films on GaAs(001).
- 出版日期1998
