Dislocation-free CZ-Si crystal growth without the thin Dash-neck

作者：Huang XM^*; Taishi T; Hoshikawa K

来源：International Journal of Materials and Product Technology, 2005, 22(1-3): 64-83.

• Czochralski growth
• dislocation-free
• heavy B and Ge codoping
• heavy B doping
• Si crystal

It is found that dislocation-free Si crystal growth is possible without a thin neck. Dislocation behaviour in a heavily B-doped CZ-Si crystal has been analysed, and it is found that three kinds of dislocations generated due to thermal shock, lattice misfit and incomplete seeding must be suppressed to grow dislocation-free crystal without the thin Dash-neck. Heavily B-doped or Ge-doped Si seeds are useful in suppressing dislocation generation due to thermal shock, and heavily B- and Ge-codoped Si seeds not only suppress dislocation generation due to thermal shock most effectively but can also suppress that due to lattice misfit. A relative higher melt temperature at the start of pulling is suggested for suppressing the dislocation generation due to incomplete seeding. Dislocations were observed in crystals grown from an annealed heavily B-doped Si seed, and they were probably induced by the dislocation loops in the annealed seed.

• 出版日期2005