科研之友
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摘要
A combination of ultraviolet and inverse photoemission is often used to determine the position of the transport levels of semiconductors. Although data from direct methods like photoemission appear advantageous at first glance, large discrepancies between thus-derived band gaps and optically measured band gaps have led to fundamentally different evaluation methods of the data from ultraviolet photoelectron spectroscopy (UPS)/inverse photoelectron spectroscopy (IPS) experiments, the essential alternatives being the maxima or the onsets of the frontier peaks. In this paper, we review published data as well as present new experimental data for a few representative II-VI and III-V compound and element semiconductors. New data from silicon are utilized as examples for evaluating details of such combined UPS and IPS spectra and for answering the question of how surface effects, especially the consequences of surface reconstruction, can adequately be taken into account. The results clearly indicate that, for all three types of semiconductors, only peak onsets represent the correct band positions. Possible reasons for this finding are discussed, and an explanation in the framework of relaxation (i.e., dynamical screening) is suggested.
- 出版日期2015-5-6
