Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

作者：Kim Seong Keun; Han Sora; Han Jeong Hwan; Lee Woongkyu; Hwang Cheol Seong^*

来源：Physica Status Solidi-Rapid Research Letters, 2011, 5(8): 262-264.

DOI：10.1002/pssr.201105250

• iridium
• TiO2
• atomic layer deposition

TiO2 and Al-doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O-3 as the oxygen source. With increasing O-3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O-3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work-function of Ir.

• 出版日期2011-8