Morphological study of SiC coating developed on 2D carbon composites using MTS precursor in a hot-wall vertical reactor

作者：Venugopalan Ramani^*; Prakash Jyoti; Nuwad Jitendra; Pillai Chirakarumpil Gopalan Sivan; Tyagi Avesh Kumar; Dakshinamoorthy Sathiyamoorthy

来源：International Journal of Materials Research, 2012, 103(10): 1251-1256.

DOI：10.3139/146.110759

• Organometallic CVD
• Silicon carbide
• Coating
• Microstructure
• Methyl tichlorosilane

Silicon carbide coating was developed using chemical vapor deposition on carbon substrate as a protective coating. The present studies were carried out with methyl trichlorosilane as the SiC precursor, at 1 673 K along with hydrogen and argon as carrier gas using a high-temperature vertical graphite reactor. The SiC coatings were characterized by means of X-ray diffraction for phase identification. Scanning electron microscopy analysis with energy dispersive X-ray spectrometer was also carried out for microstructure and elemental analysis. From the morphological study of different SiC deposits obtained at varying operating parameters it was observed that methyl trichlorosilane feed rate and hydrogen flow rate play a major role in deciding the nature of deposits and the argon percentage in the mixed gas also plays a vital role.

• 出版日期2012-10