Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

作者：Joe Sung Min; Kang Ho Jung; Choi Nagyong; Kang Myounggon; Park Byung Gook; Lee Jong Ho^*

来源：IEEE Transactions on Electron Devices, 2016, 63(4): 1533-1538.

DOI：10.1109/TED.2016.2533019

• Feedback
• NAND flash memory
• steep slope devices
• thyristors

A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n(+) and p(+) regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density (D-it) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of <1 mV/decade.

• 出版日期2016-4