Photoinduced carrier annihilation in silicon pn junction

作者：Sameshima Toshiyuki^*; Motoki Takayuki; Yasuda Keisuke; Nakamura Tomohiko; Hasumi Masahiko; Mizuno Toshihisa

来源：Japanese Journal of Applied Physics, 2015, 54(8): 081302.

DOI：10.7567/JJAP.54.081302

We report analysis of the photo-induced minority carrier effective lifetime (tau(eff)) in a p(+)n junction formed on the top surfaces of a n-type silicon substrate by ion implantation of boron and phosphorus atoms at the top and bottom surfaces followed by activation by microwave heating. Bias voltages were applied to the p(+) boron-doped surface with n(+) phosphorus-doped surface kept at 0V. The values of tau(eff) were lower than 1 x 10(-5) s under the reverse-bias condition. On the other hand, tau(eff) markedly increased to 1.4 x 10(-4) s as the forward-bias voltage increased to 0.7V and then it leveled off when continuous-wave 635 nm light was illuminated at 0.74 mW/cm(2) on the p(+) surface. The carrier annihilation velocity Sp+ at the p(+) surface region was numerically estimated from the experimental tau(eff). Sp+ ranged from 4000 to 7200 cm/s under the reverse-bias condition when the carrier annihilation velocity Sn+ at the n(+) surface region was assumed to be a constant value of 100 cm/s. Sp+ markedly decreased to 265 cm/s as the forward-bias voltage increased to 0.7V.

• 出版日期2015-8