Atomic resolution in tunneling induced light emission from GaAs(110)

作者：Reinhardt Maria; Schull Guillaume; Ebert Philipp; Berndt Richard^*

来源：Applied Physics Letters, 2010, 96(15): 152107.

DOI：10.1063/1.3360203

• cryogenics
• gallium arsenide
• III-V semiconductors
• luminescence
• scanning tunnelling microscopy
• valence bands

A cryogenic scanning tunneling microscope is used to induce band edge luminescence from GaAs(110). The emission intensity varies within the unit mesh of the surface. This atomic resolution reflects variations of the efficiency of hole injection into states at the valence band maximum. Moreover, the hole injection efficiency is modulated by local potential fluctuations due to dopants.

• 出版日期2010-4-12