Development of industrial processes for the fabrication of high efficiency n-type PERT cells

作者：Blevin Thomas^*; Lanterne Adeline; Grange Bernadette; Cabal Raephael; Vilcot J P; Veschetti Yannick

来源：Solar Energy Materials and Solar Cells, 2014, 131: 24-29.

DOI：10.1016/j.solmat.2014.06.022

• Silicon solar cells
• PERT
• Bifacial
• Co-diffusion
• Ion implantation
• Co-annealing

In this work, two process simplifications for n-type PERT (passivated emitter rear totally diffused) bifacial solar cells are investigated. Both are based on a single thermal treatment for elaborating boron and phosphorus doped regions aiming at reducing the number of high temperature steps of standard process. The first simplification shows a mixed co-diffusion from a gaseous source of phosphorus and a boron doped dielectric layer elaborated by low frequency plasma enhanced chemical vapor deposition (PECVD). The second exhibits two independent ion implantations, followed by a co-anneal/activation step. In both cases, implied open-circuit voltages are similar to standard process (similar to 660-670 mV) and emitters allow good contacting by scree

• 出版日期2014-12
• 单位中国地震局